unisonic technologies co., ltd UTC654 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2009 unisonic technologies co., ltd qw-r502-153.b p-channel enhancement mode ? description as p-channel logic level mosfet, UTC654 has been optimized for battery power management applications. and it?s produced using utc?s advanced power trench process. ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 4 5 6 packing UTC654l-ag6-r UTC654g-ag6-r sot-26 d d g s d d tape reel ? marking
UTC654 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-153.b ? absolute maximum ratings (t a = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -30 gate-source voltage v gss 20 v continuous drain current (note 3) i d -3.6 pulsed drain current (note 2) i dm -10 a power dissipation p d 1.6 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit junction-to-ambient ja 78 c/w junction-to-case jc 30 c/w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250 a -30 v drain-source leakage current i dss v ds =-24v, v gs =0 v -1 a gate-source leakage current i gss v ds = 0v, v gs =20v 100 na breakdown voltage temperature coefficient bv dss / t j referenced to 25c,i d =-250 a -22 mv/ on characteristics gate-threshold voltage v gs(th) v ds =v gs , i d =-250 a -1 -1.9 -3 v v gs =-10 v, i d =-3.6a 63 75 static drain-source on-resistance (note2) r ds(on) v gs =-4.5 v, i d =-2.7a 100 125 m ? dynamic characteristics input capacitance c iss 298 output capacitance c oss 83 reverse transfer capacitance c rss v ds =-15v, v gs =0v, f=1.0mhz 39 pf switching characteristics turn-on delay time (note2) t d(on) 6 12 turn-on rise time t r 13 23 turn-off delay time t d(off) 11 20 turn-off fall-time t f v dd =-15v, i d =-1a, v gs =-10v, r gen =6 ? 6 12 ns total gate charge (note2) q g 6.2 9 gate-source charge q gs 1 gate-drain charge q gd v ds =-15v,v gs =-10v,i d =-3.6 a 1.2 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs =0v,i s =-1.3 a (note 2) -0.8 -1.2 v maximum continuous drain source diode forward current i s -1.3 a notes: 1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board; 270 /w when mounted on min.
UTC654 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-153.b ? typical characteristics -3.0v -3.5v -4.0v -4.5v -5.0v -6.0v v gs =-10v 15 12 9 6 3 0 012345 drain to source voltage,-v ds (v) drain current,-i d (a) on-region characteristics -10v -7.0v -6.0v -5.0v -4.5v -4.0v v gs =-3.5v 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 03 6 9 12 15 drain current,-i d (a) normalized drain-source on-resistance,r ds(on) on-resistance variation with drain current and gate voltage on-resistance,r ds(on) ( ? ) normalized drain-source on- resistance,r ds(on) 125 25 t a =-55 v ds =-5.0v 10 8 6 4 2 0 12345 drain current,-i d (a) gate to source voltage,-v gs (v) transfer characteristics -55 25 t a =125 v gs =0v 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 body diode forward voltage,-v sd (v) reverse drain current,-i s (a) bodt diode forward voltage variation with source current and temperature
UTC654 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-153.b ? typical characteristics gate-source voltage,-v gs (v) capacitance (pf) single pulse r ja =156 /w t a =25 10 8 6 4 2 0 0.01 0.1 1 10 100 time,t 1 (sec) single pulse maximum power dissipation r ds(on) limit 10 s 100 s 1ms 10ms 100ms 1s dc v gs =-10v single pulse r ja =156 /w t a =25 100 10 1 0.1 0.01 10 1 100 0.1 drain-source voltage,-v ds (v) maximum safe operating area normalized effective transient thermal resistance,r(t)
UTC654 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-153.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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